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Project TitleSynthesis and Thin Film Fabrication of Lithographically Patternable Block Copolymers Consisting of Polar and Non-polar Blocks
Track Code5471
Short Description

Cornell University offers a method to obtain integrated nm scale patterns. This technology involves a technique to obtain high lateral ordering of two immiscible self-assembling block copolymers and subsequent degradation of one of the polymers resulting in fine tunable areas having nanoscale patterns.


With this patented approach it is possible to create nm scale patterns of packed arrays of spheres, cylinders, and lamellae with fine-tunability of nano-domain size (3−50 nm). These high-resolution hierarchical structures can function as nano-devices with integrated nanoscale pattern or alternately can serve as patterned templates or scaffolds for the fabrication of various types of multifunctional nanomaterials. Such patterns cannot be obtained by only conventional lithography or block copolymer lithography.


In the present example, lateral ordering of arrays of polystyrene dots were achieved in thin films of poly (styrene-block-2,2,2-trifluoroethyl methacrylate) (PS-b-PTFEMA) and poly [styrene-block-(methyl methacrylate-co-2,2,2-trifluoroethyl methacrylate)] (PS-b-(PMMA-co-PTFEMA)). These thin films were subjected to conventional lithographic processing using e-beam and deep-UV radiation to create integrated patterns such as “dots in lines” as shown in the figure below.


Potential Applications

· Semiconductor/IC

· Photonic band gap materials

· Magnetic storage materials

· Lithography



· 5-50nm scale features achievable

· Almost defect-free lateral and vertical ordering of polymer


Tagsblock copolymers, Industrial Nanofabrication, polymer, lithography
Posted DateJul 24, 2017 11:37 AM


Christopher Ober
Rina Maeda
Nam-ho You
Teruaki Hayakawa

Additional Information


· Rina Maeda,† Teruaki Hayakawa,† and Christopher K. Ober, “Dual Mode Patterning of Fluorine-Containing Block Copolymers through Combined Top-down and Bottom-up Lithography”, Chem. Mater. 2012, 24, 1454−1461.

· C. Ober, R. Maeda, N. You, T. Hayakawa. Block Copolymers and Lithographic Patterning Using Same; U.S. Patent 9,541,830. January 10, 2017.

Licensing Contact

Carolyn A. Theodore
607 254 4514


File Name Description
d-5471 Flintbox Image.gif None Download
D5471-Tech-Brief Lithography.pdf Technology Brief Document in PDF format Download