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Project TitleEnhancement Mode AlGaN/GaN Transistor
Track Code5018
Short Description

An enhancement mode for high speed AlGaN/GaN transistors was developed for improved performance over conventional passivation technologies.

Abstract

An enhancement mode for high speed AlGaN/GaN transistors was developed for improved performance over conventional passivation technologies.  The transistors are made by selectively diffusing Mg into the AlGaN barrier layer under the gate electrode to introduce fixed negative charge (ionized acceptors). This results in a shift of the threshold voltage (pinch off condition) from a negative voltage to a positive voltage, allowing enhancement mode device operation. Because the Mg diffusion is selective, enhancement mode devices can be integrated with depletion mode devices on the same hetero-epitaxial substrate.

 

Potential Application:

Smart energy management, e.g. to improve power conversion of high voltage solar and wind energy resources

 

Advantages:

  • Operates in enhancement mode for improved performance
  • Can integrate with depletion mode devices on the same substrate
 
Tagsmaterials, Novel Processes, physical science, transistors, device coatings
 
Posted DateMay 15, 2013 5:39 PM

Researcher

Name
Richard Brown
James Shealy

Additional Information

Patent applications:  WO/2011/163318; US13/389,127; CN201180004026.8

Licensing Contact

Patrick Govang
pjg26@cornell.edu
607-254-2330

Files

File Name Description
4661-4662-5018 Technology Brief.pdf Combined Technology Brief Download