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Project TitleSynthesis of Graphene Nanoribbons
Track Code5488
Short Description

This invention is a novel method to convert conducting polymers into narrow strips of carbon semiconductors known as graphene nanoribbons (GNR), enabling graphene as a suitable substitute for silicon in high-performance nanoelectronic devices.

Abstract

Due to its outstanding charge mobility and inherent nanoscale dimensionality. graphene is considered one of the most promising alternatives to overcome the scalability limit of conventional silicon metal-oxide field-effect transistors (MOSFETs).

                          

The most practical and important approach to transform graphene into a semiconductor is to narrow large-area graphene into ribbons less than 10 nm wide. However, none of the existing methods for forming GNRs provide structurally precise materials with controlled lengths, widths, and edge compositions. This invention overcomes these barriers and provides unprecedented control over GNR parameters to design all aspects of their structure by directly and precisely synthesizing GNRs with pre-specified properties instead of employing subtractive, top-down approaches to pattern GNRs from larger species like graphite, large sheets of graphene and nanotubes.

                                

By opening a bandgap in graphene in a predictable and practical way the invention enables graphene to be suitable for logic applications, thereby achieving an important milestone for the future of nanoelectronics. In addition the GNRs are synthesized from poly(phenylene ethynylenes), one of the most versatile and easily synthesized conjugated polymers.

                                                     

Potential Applications

  • High-performance nanoelectronics
  • Chemical and biological sensors

                               

Advantages

  • Structurally precise material property control, e.g. width and edge structure
  • Readily available starting materials
 
TagsIndustrial Nanofabrication, materials, nanotechnology, Novel Processes, physical science, Semiconductors & Integrated Circuits, semiconductor materials, sensors
 
Posted DateJul 11, 2012 4:04 PM

Researcher

Name
William Dichtel
Hasan Arslan

Additional Information


  • Patent Issued in the U.S. (US 9,556,085), Europe (EP 2702005).
  • Patent Application filed in China under the publication number CN103635423A.

Licensing Contact

Carolyn A. Theodore
cat42@cornell.edu
(607) 254 4514